Part Number: TQM150NB04DCR 40V, 39A, Dual N-Channel Power MOSFET
Specifications
Category 分立元器件
金属氧化物场效应管
N通道
Package PDFN56U Dual
Type N-Channel
Technology Trench
Configuration Dual
Status Active
AEC-Q Yes
VDS (V) 40
VGS ±(V) 20
ID Max. (A) 39
TJ Max. (°C) 175
RDS(ON) @ 10V Max. (mΩ) 15
RDS(ON) @ 10V Typ. (mΩ) 10.3
RDS(ON) @ 4.5V Max. (mΩ) -
RDS(ON) @ 4.5V Typ. (mΩ) -
RDS(ON) @ 2.5V Max. (mΩ) -
RDS(ON) @ 2.5V Typ. (mΩ) -
RDS(ON) @ 1.8V Max. (mΩ) -
RDS(ON) @ 1.8V Typ. (mΩ) -
Qg (nC) @ 10V 18
Qg (nC) @ 4.5V -
Qgd (nC) 4
Qgs (nC) 6
Ciss (pF) 1135
Coss (pF) 112
Crss (pF) 52
MSL 1
VGS(th) Max. (V) 4
VGS(th) Min. (V) 1.8
VGS(th) Typ. (V) 2.8
Datasheet
TQM150NB04DCR_A1912.pdf Download
Resources
TQM150NB04DCR
Features and benefits
● AEC-Q101 Rev-D Qualified
● 100% UIS and Rg tested
● 175°C Operating Junction Temperature
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21

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