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TSC launches new 40V and 60V N-Ch MOSFETs rated to 175°C TJ for high ambient temperature applications
Mar
09
18

Taiwan Semiconductor introduces new 40V and 60V N-Ch MOSFET families. Featured with TJ rated to 175°C, logic or standard gate threshold voltage levels, and a wide range of RDS(on) levels for flexible and robust power switching designs. Qgd/Qgs and Qrr parameters have been optimized to improve figure of merit and reduce EMI. The MOSFETs are packaged in a small form factor PDFN56 package for improved power density in application.

Features

  • 175°C operating junction temperature
  • High thermal design margin
  • Higher surge current capability during cold load start-up and in rush
  • Suited for high temperature environment applications
Part Number VDS (V) RDS10V (mΩ) max. RDS4.5V (mΩ) max. Qg10V (nC_typ.) Qg4.5V (nC_typ.) Qgs (nC_typ.) Qgd (nC_typ.) TJ Max.(°C) Package
TSM025NB04LCR 40 2.5 3.2 112 57 18 27 175 PDFN56
TSM033NB04LCR 40 3.3 4 79 40 12 19 175 PDFN56
TSM070NB04LCR 40 7 9.5 39 20 6 11 175 PDFN56
TSM110NB04LCR 40 11 16 23 12 4 6 175 PDFN56
TSM150NB04LCR 40 15 19 18 9 3 5 175 PDFN56
TSM025NB04CR 40 2.5 N/A 113 N/A 32 26 175 PDFN56
TSM033NB04CR 40 3.3 N/A 77 N/A 23 19 175 PDFN56
TSM070NB04CR 40 7 N/A 40 N/A 12 10 175 PDFN56
TSM110NB04CR 40 11 N/A 23 N/A 7 6 175 PDFN56
TSM150NB04CR 40 15 N/A 19 N/A 6 4 175 PDFN56
TSM048NB06LCR 60 4.8 6.8 105 52 17 23 175 PDFN56
TSM130NB06LCR 60 13 18 37 18 7 9 175 PDFN56
TSM220NB06LCR 60 22 28 23 12 4 5 175 PDFN56
TSM280NB06LCR 60 28 39 18 9 3 4 175 PDFN56
TSM045NB06CR 60 5 N/A 104 N/A 30 24 175 PDFN56
TSM130NB06CR 60 13 N/A 36 N/A 12 8 175 PDFN56
TSM220NB06CR 60 22 N/A 23 N/A 6.5 5.4 175 PDFN56
TSM300NB06CR 60 30 N/A 18 N/A 6 4 175 PDFN56
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