Category |
個別半導体 シリコン ダイオード ショットキー・バリア・ダイオード |
---|---|
Package | SMPC4.6U (TO-277A) |
VRRM (V) | 60 |
IF(AV) (A) | 5 |
IFSM (A) | 110 |
Type | |
Technology | Trench |
IR (µA) | 200 |
VF (V) | 0.64 |
Status | Active |
AEC-Q | Yes |
TJ Max. (°C) | 175 |
Family | Schottky |
MSL | 1 |
VF @ TJ (°C) |
TSUP5M60SH_A1909.pdf | Download |
Application Note | AN-1006:Power Diode Parameters and Characteristic Introduction |
---|---|
AN-1006_功率二极管参数及特性介绍 | |
スパイスモデル | TSUP5M60SH |
3D Step Files | SMPC4.6U (TO-277A) |
外形パッケージ | SMPC4.6U (TO-277A) |
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