Category |
個別半導体 シリコン ダイオード トランジェント ボルテージ サプレッサー素子 |
---|---|
Package | DO-214AC (SMA) |
Configuration | Unidirectional |
IR (µA) | 1 |
VWM (V) | 15.3 |
PPK (W) | 400 |
Status | Active |
AEC-Q | Yes |
VBR Min. (V) | 17.1 |
VBR Nom. (V) | 18.0 |
VBR Max. (V) | 18.9 |
Tolerance ± (%) | 5 |
TJ Max. (°C) | 150 |
Family | TVS |
IPP (A) | 16.5 |
VClamp (V) | 25.5 |
P4SMA SERIES_R2005.pdf | Download |
Application Note | AN-1006:Power Diode Parameters and Characteristic Introduction |
---|---|
AN-1006_功率二极管参数及特性介绍 | |
スパイスモデル | P4SMA18A |
3D Step Files | DO-214AC (SMA) |
外形パッケージ | DO-214AC (SMA) |
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