Category |
個別半導体 シリコン ダイオード ツェナー・ダイオード |
---|---|
Package | SOD-123F |
VZ Nom. (V) | 18.0 |
IR @ VR (V) | 12.6 |
PD (mW) | 500 |
Status | Active |
AEC-Q | No |
Tolerance ± (%) | 2 |
TJ Max. (°C) | - |
Family | Small Signal Zener Diode |
IR @ VR (µA) | 0.045 |
IZT (mA) | 5 |
IR @ VR Max. (µA) | - |
MSL | 1 |
VR (µA) | - |
ZZK @ IZK (mA) | 1.00 |
ZZK @ IZK (Ω) | 212 |
ZZT @ IZT (Ω) | 45 |
VZ Min. (V) | - |
VZ Max. (V) | - |
Application Note | AN-1006:Power Diode Parameters and Characteristic Introduction |
---|---|
AN-1006_功率二极管参数及特性介绍 | |
スパイスモデル | BZT52B18 |
外形パッケージ | SOD-123F |
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