Category |
Discrete Devices Diode Schottky |
---|---|
Package | SMPC (TO-277A) |
VRRM (V) | 200 |
IF(AV) (A) | 10 |
IFSM (A) | 180 |
Type | Ultra low leakage |
Technology | Trench |
IR (µA) | 100 |
VF (V) | 0.91 |
Status | Active |
AEC-Q | No |
TJ Max. (°C) | 150 |
Family | Schottky |
MSL | 1 |
VF @ TJ (°C) |
TSP10H200S_D15.pdf | Download |
Application Note | AN-1006:Power Diode Parameters and Characteristic Introduction |
---|---|
AN-1006_功率二极管参数及特性介绍 | |
SPICE Model | TSP10H200S |
Package Outline Dimensions | SMPC (TO-277A) |
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