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* Taiwan Semiconductor
* TQM150NB04DCR
* 40V,39A Dual N-Channel Power MOSFET
* Date: 2020-02-07
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.SUBCKT TQM150NB04CR D G S 
**+params:  EP= {EP}
M1 3 GX S S NMOS W= 1817894u L= 0.3u 
M2 S GX S D PMOS W= 1817894u L= 0.8u
R1 D 3 0.5m TC= 150e-4 50u
CGS GX S 0.82n
CGD GX D 10p
RG G GY 1.5
RTCV 100 S 0.7e6 TC=-4.7m 18u
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 7.5e-8 
+ RS = 0 KP = 35e-6  NSUB = 1.17e+16  THETA= 2 VTO= 4
+ KAPPA = 1.8 NFS = 1.25e+12 Rds=31e+9
+ LD = 0 IS = 0 TPG = 1  ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 7.5e-8  
+NSUB = 1e+15 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 11.5e-9 T_MEASURED = 25 BV = 47.7 IBV=250u TBV1=1000e-6 TBV2=-0.1u
+RS = 3.3m N = 1.064e+00 IS = 13e-12
+EG = 1.149 XTI = 1.026e+00 TRS1 = 2.410e-03 
+CJO = 88p VJ = 12.5 M = 0.7 ) 
****************************************************************
.ENDS